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Ruichips |
RU1H100R
N-Channel Advanced Power MOSFET
Features
• 100V/75A
RDS (ON)=11mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
Pin Description
TO-220
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
StoragEeAST③emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev.B –SEP., 2010
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
Unit
100
±25
175
-55 to 175
①
75
②
300
①
75
59
150
75
1.0
V
°C
°C
A
A
W
°C/W
196 mJ
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RU1H100R
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H100R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
100
VDS= 100V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
2
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
④
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
V
1
µA
30
34V
±100 nA
11 15 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
VDD=50V,IDS= 40A, VGEN=
10V,RG=5.6Ω
VDS=80V, VGS= 10V,
IDS=40A
1.2 V
36 ns
46 nC
1.5
3450
265
148
19
86
55
69
Ω
pF
ns
85
20 nC
35
Notes:
Calculated continuous current based on maximum allowable junction temperature. Limited by bonding
wire.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =28A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B –SEP., 2010
2
www.ruichips.com
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