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N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU190N08R 데이터시트, 핀배열, 회로
RU190N08R
N-Channel Advanced Power MOSFET
Features
· 80V/190A
RDS (ON)=3.9m(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-220
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
80
±25
175
-55 to 175
190
700
190
140
312
156
0.48
1225
Unit
V
°C
°C
A
A
W
°C/W
mJ
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
www.ruichips.com


RU190N08R 데이터시트, 핀배열, 회로
RU190N08R
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU190N08R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS= 80V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
80
2
V
1
µA
30
34V
±100 nA
3.9 4.8 m
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35,
IDS= 1A, VGEN= 10V,
RG=6
VDS=30V, VGS= 10V,
IDS=40A
1.2 V
68 ns
130 nC
1.0
6800
1100
490
38
22
120
75
pF
ns
155
45 nC
48
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =50A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
2
www.ruichips.com




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RU190N08R mosfet

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