RU2021H 반도체 회로 부품 판매점
N-Channel Advanced Power MOSFET
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 Ruichips |
Features
• 20V/20A,
RDS (ON) =4mΩ (Typ.) @ VGS=10V
RDS (ON) =5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
• Lead Free and Green Available
RU2021H
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
SOP-8
Applications
• DC/DC Converter
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20
±12
150
-55 to 150
4.4
①
70
20
16
3.1
2
40
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com
RU2021H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU2021H
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VGS=0V, IDS=250µA
VDS=20V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±12V, VDS=0V
③
RDS(ON)
Drain-Source On-state Resistance
VGS=10V, IDS=20A
VGS=4.5V, IDS=16A
20
1
V
1
30
2.5
±100
µA
V
nA
4 5.2 mΩ
5 7 mΩ
Diode Characteristics
③
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
④
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=1A, VGS=0V
ISD=10A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=10V,
Frequency=1.0MHz
VDD=10V, RL=1Ω,
IDS=10A, VGEN=10V,
RG=6Ω
VDS=16V, VGS=10V,
IDS=10A
1V
27 ns
39 nC
2
3680
1530
370
20
25
92
45
Ω
pF
ns
53
11 nC
20
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
2
www.ruichips.com
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RU2021H mosfet
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