|
Ruichips |
RU1HL13R
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-13A,
RDS (ON) =160mΩ(tpy.)@VGS=-10V
RDS (ON) =180mΩ(tpy.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management
• DC/DC Converters
Pin Description
TO-220
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
-100
±20
175
-55 to 175
-13
①
-52
-13
-9
54
27
2.8
56
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
www.ruichips.com
RU1HL13R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1HL13R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
-100
V
IDSS Zero Gate Voltage Drain Current VDS= -100V, VGS=0V
TJ=85°C
-1
µA
-30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-1.5 -2 -2.7 V
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
±10 µA
③
RDS(ON)
Drain-Source On-state Resistance
VGS= -10V, IDS=-8A
VGS= -4.5V, IDS=-6A
160 200 mΩ
180 250 mΩ
Diode Characteristics
③
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
④
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=-1A, VGS=0V
ISD=-13A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
VDD=-50V, RL=3.8Ω,
IDS=-13A, VGEN=-10V,
RG=6Ω
VDS=-80V, VGS= -10V,
IDS=-13A
-1.2 V
35 ns
65 nC
10
1089
616
191
13
16
31
18
Ω
pF
ns
28
9 nC
10
Notes:
Pulse width limited by safe operating area.
Limited by TJmax, IAS =15A, VDD =-48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
2
www.ruichips.com
|