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RU1HL13R 반도체 회로 부품 판매점

P-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1HL13R 데이터시트, 핀배열, 회로
RU1HL13R
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-13A,
RDS (ON) =160mΩ(tpy.)@VGS=-10V
RDS (ON) =180mΩ(tpy.)@VGS=-4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management
DC/DC Converters
Pin Description
TO-220
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
-100
±20
175
-55 to 175
-13
-52
-13
-9
54
27
2.8
56
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
www.ruichips.com


RU1HL13R 데이터시트, 핀배열, 회로
RU1HL13R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1HL13R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
-100
V
IDSS Zero Gate Voltage Drain Current VDS= -100V, VGS=0V
TJ=85°C
-1
µA
-30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-1.5 -2 -2.7 V
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
±10 µA
RDS(ON)
Drain-Source On-state Resistance
VGS= -10V, IDS=-8A
VGS= -4.5V, IDS=-6A
160 200 m
180 250 m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=-1A, VGS=0V
ISD=-13A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
VDD=-50V, RL=3.8,
IDS=-13A, VGEN=-10V,
RG=6
VDS=-80V, VGS= -10V,
IDS=-13A
-1.2 V
35 ns
65 nC
10
1089
616
191
13
16
31
18
pF
ns
28
9 nC
10
Notes:
Pulse width limited by safe operating area.
Limited by TJmax, IAS =15A, VDD =-48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
2
www.ruichips.com




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RU1HL13R mosfet

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