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PDF SQ1421EDH Data sheet ( Hoja de datos )
| Número de pieza | SQ1421EDH | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ1421EDH
Vishay Siliconix
Automotive P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
Package
-60
0.290
0.395
-1.6
Single
SC-70
SOT-363
SC-70 Single (6 leads)
S
4
D
5
D
6
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Typical ESD protection: 800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
(1, 2, 5, 6) D
(3) G
Marking Code: 9B
1
D
Top View
2
D
3
G
P-Channel MOSFET
(4) S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-60
± 20
-1.6
-1
-1.6
-6.7
-8
3.2
2.7
0.5
-55 to +150
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
125
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2690-Rev. A, 16-Nov-15
1
Document Number: 68494
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
- 60
- 64
ID = 1 mA
- 68
- 72
- 76
- 80
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
IDM Limited
10
Limited by RDS(on) (1)
100 µs
1
ID Limited
1 ms
10 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ1421EDH
Vishay Siliconix
S15-2690-Rev. A, 16-Nov-15
5
Document Number: 68494
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQ1421EDH.PDF ] | |
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