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PDF SQ1470AEH Data sheet ( Hoja de datos )
| Número de pieza | SQ1470AEH | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SQ1470AEH
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 4.5 V
RDS(on) () at VGS = 2.5 V
ID (A)
Configuration
SOT-363
SC-70 Single (6 leads)
S
4
D
5
D
6
30
0.065
0.095
1.7
Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
G
Marking Code: 9O
1
D
Top View
2
D
3
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
SC-70
SQ1470AEH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
30
± 12
1.7
1.7
1.7
6.7
10
5
3.3
1.1
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
125
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1473-Rev. A, 17-Jun-15
1
Document Number: 67108
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
10
Limited by RDS(on)*
IDM Limited
1 1 ms
ID Limited
10 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100ms, 1s, 10s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ1470AEH
Vishay Siliconix
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1473-Rev. A, 17-Jun-15
5
Document Number: 67108
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
AN815
Vishay Siliconix
400
320
240
Alloy
42
160
Copper
80
0
10-5 10-4 10-3 10-2 10-1 1 10 100
Time (Secs)
FIGURE 4. Leadframe Comparison on EVB
1000
250
200
150
Alloy
42
100
50
Copper
0
10-5 10-4 10-3 10-2 10-1 1 10 100 1000
Time (Secs)
FIGURE 5. Leadframe Comparison on Alloy 42 1-inch2 PCB
Document Number: 71334
12-Dec-03
www.vishay.com
3
11 Page | ||
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| PDF Descargar | [ Datasheet SQ1470AEH.PDF ] | |
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