파트넘버.co.kr SP8K24FRA 데이터시트 PDF


SP8K24FRA 반도체 회로 부품 판매점

4V Drive Nch+Nch MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
SP8K24FRA 데이터시트, 핀배열, 회로
Transistor
4V Drive Nch+Nch MOSFET
SP8K244FRA
SP8SKP284KF2R4A
AEC-Q101 Qualified
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
zApplications
Power switching , DC / DC converter , Inverter
zDimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
1.75
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging dimensions
Package
Type
Code
Basic ordering unit (pieces)
SPSP8K8K242F4RA
Taping
TB
2500
zEquivalent circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW 10µs、Duty cycle 1%
*2 Mounted on a ceramic board
Symbol Limits
Unit
VDSS
45
V
VGSS
±20
V
ID ±6.0
A
IDP *1
±24
A
IS 1
A
ISP *1
24
A
PD *2
2
1.4
W / TOTAL
W / ELEMENT
Tch 150
Tstg -55 to +150
oC
oC
Rev.B
1/4


SP8K24FRA 데이터시트, 핀배열, 회로
Transistor
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS= 45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
18 25 mID= 6.0A, VGS= 10V
24 34 mID= 6.0A, VGS= 4.5V
26 37 mID= 6.0A, VGS= 4.0V
Forward transfer admittance Yfs 6.0 − − S VDS= 10V, ID= 6.0A
Input capacitance
Ciss
1400
pF VDS= 10V
Output capacitance
Coss 310 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
175
19
30
72
27
15.4 21.6
3.7
6.5
pF f=1MHz
ns VDD 25V
ns
ns
ID= 3.0A
VGS= 10V
RL= 8
ns RG=10
nC VDD 25V, VGS= 5V
nC ID= 6.0A
nC RL= 4Ω, RG= 10
Pulsed
SP8SKP284KF2R4A
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
* pulsed
Symbol
VSD *
Min.
Typ.
Max.
1.2
Unit Condition
V IS=6.0A/VGS=0V
Rev.B
2/4




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: ROHM Semiconductor

( rohm )

SP8K24FRA mosfet

데이터시트 다운로드
:

[ SP8K24FRA.PDF ]

[ SP8K24FRA 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


SP8K24FRA

4V Drive Nch+Nch MOSFET - ROHM Semiconductor