파트넘버.co.kr RUR040N02FRA 데이터시트 PDF


RUR040N02FRA 반도체 회로 부품 판매점

Nch 20V 4A Small Signal MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
RUR040N02FRA 데이터시트, 핀배열, 회로
RUR040N02FRA
  Nch 20V 4A Small Signal MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
20V
35mΩ
±4.0A
1.0W
lFeatures
1) 1.5V drive
2) Low on-resistance
3) Built-in G-S protection diode
4) Small surface mount package(TSMT3)
5) AEC-Q101 Qualified
lOutline
SOT-346T
SC-96
TSMT3
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
XF
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
20 V
Continuous drain current
ID ±4.0 A
Pulsed drain current
IDP*1 ±8 A
Gate - Source voltage
VGSS
±10 V
Power dissipation
PD*2 1.0 W
PD*3 0.76 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160808 - Rev.001    


RUR040N02FRA 데이터시트, 핀배열, 회로
RUR040N02FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 165
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 20V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
VGS = 4.5V, ID = 4.0A
Static drain - source
on - state resistance
RDS(on)*4 VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 2.0A
VGS = 1.5V, ID = 0.8A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 4.0A
Values
Unit
Min. Typ. Max.
20 - - V
- 29.0 - mV/
- - 1 μA
- - ±10 μA
0.3 - 1.3 V
- -1.6 - mV/
- 25 35
- 33 46
- 42 59
- 55 110
- 6.9 -
Ω
5.0 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20160808 - Rev.001




PDF 파일 내의 페이지 : 총 14 페이지

제조업체: ROHM Semiconductor

( rohm )

RUR040N02FRA mosfet

데이터시트 다운로드
:

[ RUR040N02FRA.PDF ]

[ RUR040N02FRA 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RUR040N02FRA

Nch 20V 4A Small Signal MOSFET - ROHM Semiconductor