|
|
Número de pieza | MTB180N06KSN3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB180N06KSN3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
60V N-Channel Enhancement Mode MOSFET
MTB180N06KSN3
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 1/9
Features
• Simple drive requirement
• Small package outline
• ESD protected gate
• Pb-free lead plating and halogen-free package
BVDSS
ID@ TA=25°C, VGS=10V
RDSON@VGS=10V, ID=1.8A
RDSON@VGS=4.5V, ID=1.3A
55V
1.9A
145mΩ(typ)
173mΩ(typ)
Symbol
MTB180N06KSN3
Outline
SOT-23
D
G:Gate
S:Source
D:Drain
S
G
Ordering Information
Device
Package
Shipping
MTB180N06KSN3-0-T1-G
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB180N06KSN3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C oss
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2 ID=1mA
1
0.8
0.6
0.4 ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=40V
8
VDS=25V
6
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
4
2
ID=1.8A
0
012345
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
2.5
10
RDS(ON)
Limited
100μs
1 1ms
10ms
0.1
TA=25°C, Tj=150°, VGS=10V
RθJA=100°C/W, Single Pulse
0.01
100ms
DC
0.01 0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
2
1.5
1
0.5
TA=25°C, VGS=10V, RθJA=100°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB180N06KSN3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB180N06KSN3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB180N06KSN3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |