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PDF MTB15A04DH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB15A04DH8 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 1/ 11
Dual N-Channel Enhancement Mode Power MOSFET
MTB15A04DH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
ID@VGS=10V, TA=70°C
• Low On Resistance
RDS(ON)@VGS=10V, ID=8A
• Simple Drive Requirement
• Low Gate Charge
RDS(ON)@VGS=4.5V, ID=4A
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
40V
26A
16.4A
7.0A
5.6A
11.3mΩ(typ)
14.2mΩ(typ)
Equivalent Circuit
MTB15A04DH8
Outline
Pin 1
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB15A04DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB15A04DH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 5/ 11
Typical Characteristics
Typical Output Characteristics
100
10V, 9V, 8V,7V,6V
80 5V
4.5V
60
4V
40
3.5V
20
VGS=2.5V
3V
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
10
VGS=10V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
1
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
80 ID=8A
60
40
20
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
3.0
VGS=10V, ID=8A
2.5
2.0
1.5
1.0
0.5 RDS(ON)@Tj=25°C : 11.3mΩ typ
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB15A04DH8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
DFN5×6 Dimension
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 11/ 11
Marking:
Device Name
Date Code
B15
A04
8-L8e-LaedapdoDwFeNr 5p×a6kPPlalastsicticPaPcakcakgae ge
CYCSYteSkPPacakcakgaegCeoCdeod: eH:8H8
DIM
Millimeters
Min. Max.
Inches
Min. Max.
DIM
Millimeters
Min. Max.
Inches
Min. Max.
A 0.900 1.000 0.035 0.039 E2 5.674 5.826 0.223 0.229
A3 0.254 REF
0.010 REF
k 1.190 1.390 0.047 0.055
D 4.944 5.096 0.195 0.201 b 0.350 0.450 0.014 0.018
E 5.974 6.126 0.235 0.241 e
1.270 TYP
0.050 TYP
D1 1.470 1.870 0.058 0.074 L 0.559 0.711 0.022 0.028
D2 0.470 0.870 0.019 0.034 L1 0.424 0.576 0.017 0.023
E1 3.375 3.575 0.133 0.141 H 0.574 0.726 0.023 0.029
D3 4.824 4.976 0.190 0.196
θ
10°
12°
10°
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB15A04DH8
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTB15A04DH8.PDF ] | |
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