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PDF MTB012N04J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB012N04J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB012N04J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C450J3
Issued Date : 2016.11.11
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB012N04J3 BVDSS
40V
ID@VGS=10V, TC=25°C
40A
RDS(ON)@VGS=10V, ID=20A 9.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 13.4 mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB012N04J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
Package
MTB012N04J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N04J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C450J3
Issued Date : 2016.11.11
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
Crss
10
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2 ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100 RDS(ON)
Limited
10
1
TC=25°C, Tj=150°, VGS=10V
RθJC=3°C/W, Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
8 VDS=15V
6
4
VDS=20V
2
ID=20A
0
0 2 4 6 8 10 12 14 16
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10 VGS=10V, RθJC=3°C/W
5
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB012N04J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB012N04J3.PDF ] | |
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