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Infineon |
EiceDRIVER™
1EDN751x/1EDN851x
Features
Fast, Precise, Strong and Compatible
• 5 ns slew rate to support high speed Superjunction MOSFET (like CoolMos™ C7) or GaN devices
• 19 ns propagation delay precision for fast MOSFET and GaN switching
• 8 A sink and 4 A source driver capability enables fast switching for very high efficiency applications and
powers low ohmic MOSFET
• Industry standard packages and pinout ease system-design upgrades
The New Reference in Ruggedness
• 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal
conditions
• -10 V input voltage capability delivers robustness and crucial safety margin when device is driven from pulse-
transformers
• 5 A reverse current robustness eliminates the need for output protection circuitry
Applications
• Server SMPS (Switch Mode Power Supplies)
• TeleCom SMPS
• DC-to-DC Converter
• Bricks
• Power Tools
• Industrial SMPS
• Motor Control
Example Topologies
• Synchronous Rectification
• Power Factor Correction PFC (DCM, CCM)
• LLC, ZVS in combination with pulse transformer for isolation
Description
The 1EDN7x/1EDN8x is an advanced single-channel driver. It is suited to drive logic and normal level MOSFETs
and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and
GaN Power devices.
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/1EDN
Rev. 2.0
2016-10-28
EiceDRIVER™
1EDN751x/1EDN851x
Description
The control and enable inputs are LV-TTL compatible (CMOS 3.3 V) with an input voltage range from -5 V to +20 V.
-10 V input pin robustness protects the driver against latch-up or electrical overstress which can be induced by
parasitic ground inductances. This greatly enhances system stability.
4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET and GaN protection under abnormal
conditions. Under such circumstances, this UVLO mechanism provides crucial independence from whether and
when other supervisors circuitries detect abnormal conditions.
The output is able to sink 8 A and source 4 A currents utilizing a true rail-to-rail stage. This ensures very low on-
resistance of 0.85 Ω up to the positive and 0.35 Ω down to the negative rail respectively. Industry-leading reverse
current robustness eliminates the need for Schottky diodes at the outputs and reduces the bill-of-material.
The pinout of the 1EDN family is compatible with the industry standard. Three package variants, SOT23 6-pin, 5-
pin and WSON 6-pin, allow optimization of PCB board space usage and thermal characteristics.
1EDN751x/
1EDN851 x
IN+ VDD
IN- OUT_SRC
GND OUT_SNK
VDD
Rg1
Rg 2
CVDD
Load
M1
Figure 1 Typical application
Data Sheet
2
Rev. 2.0
2016-10-28
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