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CJ7203KDW 반도체 회로 부품 판매점

N-channel MOSFET and Schottky Barrier Diode



JCET 로고
JCET
CJ7203KDW 데이터시트, 핀배열, 회로
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Power Management MOSFETs-Schottky
CJ7203KDW N-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
RDS(on)MAX
ID/IO
5Ω@10V
60V 340mA 
5.3Ω@5V
40V / 350mA  
SOT-363
FEATURE
APPLICATION
z High density cell design for Low RDSon
z Load Switch for Portable Devices
z High saturation current capability
z DC/DC Converter
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Capacitance
MARKING
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol Parameter
1-MOSFET
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM* Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive ratingPluse width limited by junction temperature.
www.cj-elec.com
1
Value
60
±20
0.34
1.36
40
40
0.35
0.15
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
/W
A-4,Mar,2016


CJ7203KDW 데이터시트, 핀배열, 회로
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
1-MOSFET
Static Characteristics
Drain-Source Breakdown Voltage
VDS
Gate Threshold Voltage*
VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate –Source leakage current
IGSS1
IGSS2
IGSS3
Drain-Source On-Resistance*
RDS(on)
Diode Forward Voltage
VSD
Test Condition
VGS = 0V, ID =250µA
VDS =VGS, ID =1mA
VDS =48V,VGS = 0V
VGS =±20V, VDS = 0V
VGS =±10V, VDS = 0V
VGS =±5V, VDS = 0V
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
VGS=0V, IS=300mA
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
Ciss
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
td(on)
td(off)
trr
VGS=10V,VDD=50V,RG=50,
RGS=50, RL=250
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
BVGSO Igs=±1mA (Open Drain)
SCHOTTKY BARRIER DIODE
Reverse voltage
V(BR) IR=100μA
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
IR VR=30 V
IF=20mA
VF
IF=200mA
Ctot VR=0V,f=1MHz
trr IF= IR=200mA, Irr=0.1×IR, RL=100
Min Typ
60
1 1.3
1.1
0.9
30
30
±21.5
40
50
10
Max Units
2.5
1
±10
±200
±100
5.3
5
1.5
V
V
µA
µA
nA
nA
V
nC
40 pF
30 pF
10 pF
10 ns
15 ns
ns
±30 V
V
5 μA
0.37
V
0.6
pF
ns
Notes :
*Pulse Test : Pulse Width 300µs, Duty Cycle 2%.
**These parameters have no way to verify.
www.cj-elec.com
2
A-4,Mar,2016




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N-channel MOSFET and Schottky Barrier Diode - JCET