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PDF CJ5853DCB Data sheet ( Hoja de datos )
| Número de pieza | CJ5853DCB | |
| Descripción | P-channel MOSFET and Schottky Barrier Diode | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJ5853DCB (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DCB P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V
20V
RDS(on)MAX
110mΩ@-4.5V
160mΩ@-2.5V
240mΩ@-1.8V
/
ID/IO
-2.7A
0.5A
DFNWB3×2-08L-B
FEATURE
z Independent Pinout to Each Device to
Ease Circuit Design
z Ultra low V
F
z Featuring a MOSFET and a Schottky
Barrier Diode
MARKING
APPLICATION
z Li-lon Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable，
Battery Powered Products
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM* Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-2.7
-10
20
20
0.5
1.1
114
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
A,May,2015
1 page  
DFNWB3X2-8L-B Package Outline Dimensions
1
1
1 1
DFNWB3X2-8L-B
www.cj-elec.com
5
A,May,2015
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CJ5853DCB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CJ5853DC | P-channel MOSFET and Schottky Barrier Diode | JCET |
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