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P5010AS 반도체 회로 부품 판매점

N-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
P5010AS 데이터시트, 핀배열, 회로
P5010AS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
50mΩ @VGS = 10V
ID
34A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
34
21
120
Avalanche Current
IAS 37
Avalanche Energy
L = 0.1mH
EAS
70
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
125
50
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/12


P5010AS 데이터시트, 핀배열, 회로
P5010AS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
100
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
234
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±250
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
120
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID = 10A
VGS = 10V, ID = 15A
60 80
37 50
Forward Transconductance1
gfs
VDS = 20V, ID = 15A
10
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1770
201
Reverse Transfer Capacitance
Crss
137
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2
Total Gate Charge2
Qg
42
Gate-Source Charge2
Qgs VDS = 50V, VGS = 10V, ID = 15A
11
Gate-Drain Charge2
Qgd
22
Turn-On Delay Time2
td(on)
76
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V, ID @ 15A,
VGS = 10V, RGS = 2.5Ω
251
134
Fall Time2
tf
61
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V, IF = 15A,
dlF/dt = 100A / μS
70.6
189
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
34
1.2
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
mC
Ver 1.0
2 2012/4/12




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P5010AS mosfet

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