(PDF) PZ513BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PZ513BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PZ513BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -1.3A SOT-323 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -1.3 -1 -10 Power Dissipation TA = 25 °C TA = 70 °C PD 0.3 0.2 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RqJA 360 1limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. °C / W REV 1.0 1 2015/6/8 1 page PZ513BA P-Channel Enhancement Mode MOSFET REV 1.0 5 2015/6/8 5 Page

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PDF PZ513BA Data sheet ( Hoja de datos )