P1060ETFS 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 UNIKC |
P1060ETF / P1060ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.77Ω @VGS = 10V
ID
10A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
10
6
30
3.5
Avalanche Energy3
EAS 61
Power Dissipation
TC= 25 °C
TC= 100°C
PD
39
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 100V , L = 10mH, starting TJ = 25˚C
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
3.2
UNITS
°C / W
REV 1.0
1 2015/9/25
P1060ETF / P1060ETFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V , TC = 25 °C
VDS =480V, VGS = 0V, TC = 100°C
VGS = 10V, ID = 5A
VDS =15V, ID = 5A
600
2 2.9 4
±100
1
10
0.57 0.77
15
V
nA
mA
Ω
S
DYNAMIC
Input Capacitance
Ciss
1552
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
162
Reverse Transfer Capacitance
Crss
23
Total Gate Charge2
Qg
49
Gate-Source Charge2
Qgs VDD = 480V, ID = 10A, VGS = 10V
7
Gate-Drain Charge2
Qgd
20
Turn-On Delay Time2
td(on)
60
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V , ID = 10A,
RG = 25Ω
34
220
Fall Time2
tf
47
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ= 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
10
1.5
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF= 10A, dIF/dt=100A/ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
404 nS
4.7 uC
REV 1.0
2 2015/9/25
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( unikc )
P1060ETFS mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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