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P2206BT 반도체 회로 부품 판매점

N-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
P2206BT 데이터시트, 핀배열, 회로
P2206BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ @VGS = 10V
ID
35A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
35
22
100
Avalanche Current
IAS 26
Avalanche Energy
L = 0.1mH
EAS
33.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
2
°C / W
62.5
REV 1.0
1 2017/1/16


P2206BT 데이터시트, 핀배열, 회로
P2206BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.3 1.75 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 48V , VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 12A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
20 30
17.5 22.5
45
S
DYNAMIC
Input Capacitance
Ciss
1042
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
126 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
88
1Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =30V,ID = 20A
VDD = 30V
ID @ 20A, VGS = 10V, RGEN =6Ω
25
14
nC
3.6
9.1
39
23
nS
101
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
35 A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
20 nS
11 nC
2Independent of operating temperature.
REV 1.0
2 2017/1/16




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P2206BT mosfet

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