(PDF) P3003EDG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P3003EDG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P3003EDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 30mΩ @VGS = -10V ID -18A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -18 -12 -30 Power Dissipation TC= 25 °C TC= 70°C PD 50 20 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.5 70 UNITS °C / W REV 1.0 1 2014/5/12 1 page P3003EDG P-Channel Logic Level Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/12 5 Page

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PDF P3003EDG Data sheet ( Hoja de datos )