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N-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
P5002CDG 데이터시트, 핀배열, 회로
P5002CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 50mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±16
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
20
13
60
Avalanche Current
IAS 6.8
Avalanche Energy
L=0.1mH
EAS
2.3
Power Dissipation
TC= 25 °C
TC= 100°C
PD
35
14
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
40
3.5
UNITS
°C / W
REV 1.0
1 2014/5/14


P5002CDG 데이터시트, 핀배열, 회로
P5002CDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
20
0.4 0.85 1.2
V
VDS = 0V, VGS = ±16V
±100 nA
VDS =16V, VGS = 0V
VDS =12V, VGS = 0V, TJ = 125°C
1
mA
10
VDS = 10V, VGS = 4.5V
60
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =2.5V, ID =5A
VGS =4.5V, ID =8A
55 85
37 50
Forward Transconductance1
gfs
VDS =5V, ID =8A
13 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
270
125
pF
Reverse Transfer Capacitance
Crss
85
Gate Resistance
Rg VGS = 0V,f = 1MHz
1.8 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V,VGS = 4.5V,
ID = 8A
VDD = 10V ,
ID8A, VGS = 4.5V, RGEN =3.3Ω
4.5
0.5
2
4.5
49.5
12
6
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / mS
120
480
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
23
1.3
A
V
nS
nC
REV 1.0
2 2014/5/14




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P5002CDG mosfet

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N-Channel Enhancement Mode MOSFET - UNIKC