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PDF PB210BI Data sheet ( Hoja de datos )
| Número de pieza | PB210BI | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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PB210BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
9A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
9
6
14
Avalanche Current
IAS 16
Avalanche Energy
L = 0.1 mH
EAS
14
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
36
14
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
3.5 °C / W
REV 1.0
1 2014-3-6
1 page  
PB210BI
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2014-3-6
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PB210BI.PDF ] | |
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