(PDF) PJ015BL Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PJ015BL
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PJ015BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 1Ω @VGS = 10V ID 0.8A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 0.8 0.6 4 Power Dissipation TA = 25 °C TA = 70 °C PD 1.5 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 80 Junction-to-Case RqJC 40 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2016/9/2 1 page PJ015BL N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/9/2 5 Page

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PDF PJ015BL Data sheet ( Hoja de datos )