파트넘버.co.kr PK610SA 데이터시트 PDF


PK610SA 반도체 회로 부품 판매점

N-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
PK610SA 데이터시트, 핀배열, 회로
PK610SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.8mΩ @VGS = 10V
ID
83A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
83
52
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
22
18
Avalanche Current
IAS 37
Avalanche Energy
L =0.1mH
EAS
68.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
34
13
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.3
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
53
Junction-to-Case
RqJC
3.6
1Pulse width limited by maximum junction temperature.
2Package limitation current is 45A
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2015/5/25


PK610SA 데이터시트, 핀배열, 회로
PK610SA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 1mA
30
V
VDS = VGS, ID = 250mA
1.3 1.6 2.3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
0.5
mA
5
VGS = 4.5V, ID = 16A
VGS = 10V , ID = 20A
2.7 3.5
2 2.8
VDS = 5V, ID = 20A
65 S
DYNAMIC
Input Capacitance
Ciss
2030
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
386
Reverse Transfer Capacitance
Crss
230
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 15V,
VGS = 10V, ID = 20A
41
5.5
11
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
22
53
Fall Time2
tf
21
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
15
4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 45A.
34
1
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2 2015/5/25




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: UNIKC

( unikc )

PK610SA mosfet

데이터시트 다운로드
:

[ PK610SA.PDF ]

[ PK610SA 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


PK610SA

N-Channel Field Effect Transistor - NIKO-SEM



PK610SA

N-Channel Enhancement Mode MOSFET - UNIKC