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PK555BA 반도체 회로 부품 판매점

P-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
PK555BA 데이터시트, 핀배열, 회로
PK555BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
28mΩ @VGS = -10V
ID
-19A
PDFN 5x6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
TC = 25 °C
-19
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-12
-7.8
-6.2
-50
-19.3
Avalanche Energy
L = 0.1mH
EAS
18.6
TC = 25 °C
19
Power Dissipation3
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
7.9
3.1
2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.0
1 2016/12/30


PK555BA 데이터시트, 핀배열, 회로
PK555BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
40
63 °C / W
Junction-to-Case
Steady-State
RqJC
6.3
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.The value in any given application depends on the user's specific board design.
3The Power dissipation is based on RqJA t 10s value.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-30
-0.8 -1.5 -2.5
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
uA
-10
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -6A
16 28
26 45
VDS = -5V, ID = -6A
22 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, ID = -6A
VDS = -15V,
ID @ -6A, VGS = -10V, RGS = 6Ω
963
134
118
10
22
10.8
2.4
5.4
16
18
40
26
pF
Ω
nC
nS
REV1.0
2 2016/12/30




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PK555BA mosfet

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