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PK5B3BA 반도체 회로 부품 판매점

P-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
PK5B3BA 데이터시트, 핀배열, 회로
PK5B3BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
8mΩ @VGS = -10V
ID
-74A
PDFN 5x6P
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -40
VGS ±25
TC = 25 °C
-74
Continuous Drain Current4
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-46
-12
-9.6
-100
-49.8
Avalanche Energy
L = 0.1mH
EAS
124
TC = 25 °C
83
Power Dissipation3
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
33
2.2
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.0
1 2016/12/26


PK5B3BA 데이터시트, 핀배열, 회로
PK5B3BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
35
56
Junction-to-Case
Steady-State
RqJC
1.5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.The value in any given application depends on the user's specific board design.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is -51A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-40
-1 -1.6
-3
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
-1
uA
-10
VGS = -10V, ID = -20A
VGS = -4.5V, ID = -15A
6.2 8
8.4 14
VDS = -5V, ID = -20A
60 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = -20V,
VGS = -10V , ID = -20A
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V,
ID @ -20A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
3933
507
451
3.5
84
10
20
18
45
173
122
pF
Ω
nC
nS
REV1.0
2 2016/12/26




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PK5B3BA mosfet

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