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P1003EK 반도체 회로 부품 판매점

P-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
P1003EK 데이터시트, 핀배열, 회로
P1003EK
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
10.5mΩ @VGS = -10V
ID
-30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C(Package Limited)
Continuous Drain Current
TC = 25 °C (Silicon Limited)
ID
TC = 100 °C
Pulsed Drain Current1
IDM
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
Avalanche Current
IAS
Avalanche Energy
L = 0.1mH
EAS
TC = 25 °C
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction & Storage Temperature Range
TJ, TSTG
LIMITS
-30
±25
-30
-63
-40
-120
-12
-10
-45
102
62.5
25
2.5
1.6
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/9/22

P1003EK 데이터시트, 핀배열, 회로
P1003EK
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICA
L
MAXIMUM
2
50
UNIT
°CS /
W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX S
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -10A
VGS = -10V, ID = -13A
VDS = -5V, ID = -13A
-30
-1 -1.7 -3
V
±250 nA
1
mA
10
-120
A
13 16 mΩ
8 10.5
10 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS =-10V)
Qg(VGS =-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,VGS = -10V,
ID = -13A
VDS = -20V,
ID @ -13A, VGS = -10V, RGS = 6Ω
2640
566
467
2.9
57
30
7
16
23
44
72
41
pF
Ω
nC
nS
REV 1.0
2 2014/9/22



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P1003EK mosfet

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