파트넘버.co.kr PZ2003EEA 데이터시트 PDF


PZ2003EEA 반도체 회로 부품 판매점

P-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
PZ2003EEA 데이터시트, 핀배열, 회로
PZ2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-28A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-28
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-17
-8.4
-7
-70
-30
Avalanche Energy
L = 0.1mH
EAS
45
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
10
2.2
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.1
1 2014/7/21


PZ2003EEA 데이터시트, 핀배열, 회로
PZ2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
55
Junction-to-Case
Steady-State
RqJC
5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-30
-1 -1.6
-3
V
VDS = 0V, VGS = ±16V
±30 uA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
mA
-10
VDS = -5V, VGS = -10V
-70
A
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -8A
28 35
17.6 20
VDS = -5V, ID = -8A
20 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, ID = -8A
VDS = -15V,ID @ -8A,
VGS = -10V, RGS = 6Ω
1470
238
215
3
34
18
5.3
8.4
10
6
34
20
pF
Ω
nC
nS
REV 1.1
2 2014/7/21




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: UNIKC

( unikc )

PZ2003EEA mosfet

데이터시트 다운로드
:

[ PZ2003EEA.PDF ]

[ PZ2003EEA 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


PZ2003EEA

P-Channel Enhancement Mode MOSFET - UNIKC