PZ5203QV 반도체 회로 부품 판매점
P&N-Channel Enhancement Mode MOSFET
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 UNIKC |
PZ5203QV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
22mΩ @VGS =10V
-30V
52mΩ @VGS = -10V
ID Channel
7A N
-5A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70°C
N7
P -5
ID N 5
P -4
Pulsed Drain Current1
N 28
IDM P -20
Avalanche Current
N 21
IAS P 18
Avalanche Energy
L = 0.1mH
N 22
EAS P 17
Power Dissipation
TA = 25 °C
TA = 70 °C
N
2
P
PD
N
1.28
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/9/11
PZ5203QV
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
90 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS = 0V, VGS = ±16V
N 30
P -30
N 1 1.7 3
V
P -1 -1.7 -3
N ±30
mA
P ±30
VDS = 24V, VGS = 0V
N
1
Zero Gate Voltage Drain
Current
IDSS
VDS = -24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55 °C
P
N
-1
mA
10
VDS = -20V, VGS = 0V, TJ = 55 °C P
-10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
N 20
P -20
A
VGS = 4.5V, ID = 6A
N
24 35
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -4.5V, ID = -5A
VGS = 10V, ID = 7A
P
N
55 92 mΩ
18 22
VGS = -10V, ID = -5A
P
34 52
Forward Transconductance1
gfs
VDS = 10V, ID = 7A
N
10
S
VDS = -10V, ID = -5A
P
10
REV 1.0
2 2014/9/11
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PZ5203QV mosfet
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