PD0903BVA 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 UNIKC |
PD0903BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
13A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
13
10
80
Avalanche Current
IAS 30
Avalanche Energy
L =0.1mH
EAS
45
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.3
1.5
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
55
Junction-to-Case
Steady-State
RqJC
3.7
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design
UNITS
°C / W
REV 1.0
1 2014/9/12
PD0903BVA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
30
1
80
1.7 3
V
±100 nA
0.03
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 13A
VGS = 10V, ID = 13A
VDS = 10V, ID = 13A
11.2 13
79
47
mΩ
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V,VDS = 0V,f = 1MHz
1570
202
158
1.4
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 0.5V(BR)DSS, ID = 13A
31
16
5.5
Gate-Drain Charge2
Qgd
8
Turn-On Delay Time2
td(on)
10.8
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V,
ID @ 13A,VGEN = 10V, RG = 6Ω
16.8
38.4
Fall Time2
tf
19.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
0.8
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 13A, dl/dt = 100A / μS
15
4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
3Maximum continuous current include Body diode + Shottky
6
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/12
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PD0903BVA mosfet
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국내 전력반도체 판매점
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관련 데이터시트
PD0903BV
N-Channel Enhancement Mode MOSFET - UNIKC
PD0903BVA
N-Channel Enhancement Mode MOSFET - UNIKC