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PB210BV 반도체 회로 부품 판매점

N-Channel Enhancement Mode MOSFET



UNIKC 로고
UNIKC
PB210BV 데이터시트, 핀배열, 회로
PB210BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
2.1A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TA = 25 °C
TA = 70 °C
ID
IDM
2.1
1.7
17
Avalanche Current
IAS 17
Avalanche Energy
L =0.1mH
EAS
15.4
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.3
1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by Package.
SYMBOL
RqJA
RqJc
TYPICAL
MAXIMUM
50
25
UNITS
°C / W
REV 1.0
1 2014/12/3


PB210BV 데이터시트, 핀배열, 회로
PB210BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 55 °C
100
1
1.5 2
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 1A
VGS = 10V, ID = 2A
VDS = 5V, ID = 2A
189 240
182 230
8S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
765
59
33
pF
Gate Resistance
Rg VGS = 0V,VDS = 0V,f = 1MHz
1.85
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 50V,
ID = 2A,VGS = 10V
Qgd
16.1
1.9
5
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 2A,VGS = 10V, RGEN = 6Ω
12
15
Fall Time2
tf
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 2A, dl/dt = 100A / mS
28.9
29
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.8
1.4
nC
nS
A
V
nS
nC
REV 1.0
2 2014/12/3




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PB210BV mosfet

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