P8008BVA 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 UNIKC |
P8008BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID
3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3.5
2.8
14
Avalanche Current
IAS 14.7
Avalanche Energy
L = 0.1mH
EAS
10.8
Power Dissipation
TA= 25 °C
TA =70 °C
PD
1.8
1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Lead
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJL
TYPICAL
MAXIMUM
69
25
UNITS
°C / W
REV 1.0
1 2014/11/21
P8008BVA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 64V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 70 °C
80
1.3
1.8 2.3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 1A
VGS = 10V, ID = 3A
VDS = 10V, ID = 3A
47 78 mΩ
44 68
17 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
562
63
38
pF
Gate Resistance
Rg VGS = 0V,VDS = 0V,f = 1MHz 1.2 Ω
Total Gate Charge2(10V)
Qg
14
Total Gate Charge2(4.5V)
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 80V,
ID = 3A,VGS = 10V
VDS = 40V,
ID @ 3A,VGS = 10V, RG = 6Ω
8 nC
2
4.5
15
14
nS
38
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
trr IF = 3A, dlF/dt = 100A / mS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
1.4 A
1.3 V
17 nS
10 nC
REV 1.0
2 2014/11/21
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P8008BVA mosfet
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관련 데이터시트
P8008BV
N-Channel Enhancement Mode MOSFET - UNIKC
P8008BVA
N-Channel Enhancement Mode MOSFET - UNIKC