|
UNIKC |
P5010AV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
50mΩ @VGS = 10V
ID
5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TA = 25 °C
TA = 100 °C
ID
IDM
5
3
40
Avalanche Current
IAS 38
Avalanche Energy
L = 0.1mH
EAS
73
Power Dissipation
TA= 25 °C
TA =100 °C
PD
2
1.28
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by Package
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
25
UNITS
°C / W
REV 1.0
1 2014/12/2
P5010AV
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
2
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
VDS = 10V, VGS = 10V
40
V
34
±250 nA
1
mA
10
38 50 mΩ
6S
A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1750
190
135
pF
Gate Resistance
Rg VGS = 0V,VDS = 0V,f = 1MHz 2 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 50V,
ID = 5A,VGS = 10V
Qgd
40
10
17
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 5A,VGS = 10V, RGEN = 6Ω
28
68
Fall Time2
tf
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
54
100
1Pulse test : Pulse Width 300 msec, Duty Cycle 2%.
2Independent of operating temperature.
1.6
1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2014/12/2
|