PZ0703EV 반도체 회로 부품 판매점
P-Channel Enhancement Mode MOSFET
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 UNIKC |
PZ0703EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7mΩ @VGS = -10V
ID
-15A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-15
-11
-69
Avalanche Current
IAS -69
Avalanche Energy
L = 0.1mH
EAS
238
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2013-5-8
PZ0703EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
-30
-1.0 -1.7 -3.0
±30
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -10A
VGS = -10V, ID = -15A
VDS = -5V, ID = -15A
6.8 12
4.8 7
25
DYNAMIC
Input Capacitance
Ciss
5200
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
885
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
ID = -15A, VGS = -10V
VDS = -15V, ID @ -15A,
VGS = -10V, RGS = 6Ω
789
119
14
31
26
29
225
124
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IS = -15A, VGS = 0V
-15
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -15A, dl/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
35
20
2Independent of operating temperature.
UNITS
V
nA
mA
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2013-5-8
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제조업체: UNIKC
( unikc )
PZ0703EV mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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