(PDF) P5504EVG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P5504EVG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -4.8 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 3.1 2 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% SYMBOL RqJL RqJA TYPICAL MAXIMUM 25 40 UNITS °C / W Ver 1.0 1 2012/4/16 1 page P5504EVG P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16 5 Page

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PDF P5504EVG Data sheet ( Hoja de datos )