(PDF) PA002FMG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PA002FMG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PA002FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 100mΩ @VGS = -4.5V ID -3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3 -2.4 -10 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.64 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 125 °C / W REV 1.1 1 2014-3-10 1 page PA002FMG P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2014-3-10 5 Page

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PDF PA002FMG Data sheet ( Hoja de datos )