(PDF) PA110BDA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PA110BDA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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1. PA110BDA transistor pinout Hay una vista previa y un enlace de descarga de PA110BDA (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 15 9.2 20 Avalanche Current IAS 5.4 Avalanche Energy L =1mH EAS 14.8 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 2.5 UNITS °C / W REV 1.2 1 2015/7/9 1 page PA110BDA N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2015/7/9 5 Page

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PDF PA110BDA Data sheet ( Hoja de datos )