P5015ATF 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 UNIKC |
P5015ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
50mΩ @VGS = 10V
ID
22A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
22
14
90
Avalanche Current
IAS 26
Avalanche Energy
L = 0.1mH
EAS
35
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
56
22
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.25
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16
P5015ATF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
150
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
1.5 2.5 4.0
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±250
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VGS = 10V, VDS = 10V
90
Drain-Source On-State
RFoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 20A
VDS = 25V, ID = 20A
40 50
40
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 75V, VGS = 10V, ID = 20A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 75V, ID @ 20A
VGS = 10V, RGS = 2.5Ω
Fall Time2
tf
5240
223
152
100
23
37
16
70
25
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
87
265
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
22
1.4
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16
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P5015ATF mosfet
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