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ROHM Semiconductor |
RV3C002UN
Nch 20V 150mA Small Signal MOSFET
TENTATIVE
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
20V
2.0W
150mA
100mW
lFeatures
1) Ultra Small Package (0.6×0.4×0.36mm)
2) Low voltage drive (1.2V) makes this
device ideal for partable equipment.
3) Drive circuits can be simple.
4) Built-in ESD Protection Diode.
lApplication
Switching
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
VML0604
lInner circuit
(1) Gate
(2) Source
(3) Drain
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
8,000
T2CL
RY
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
Tj
Tstg
Value
20
150
600
10
100
150
-55 to +150
Unit
V
mA
mA
V
mW
°C
°C
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Symbol
RthJA *3
Values
Min. Typ. Max.
Unit
- - 1250 °C/W
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© 2014 ROHM Co., Ltd. All rights reserved.
1/10
2014.03 - Rev.A
RV3C002UN
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
20 -
-V
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
IDSS VDS = 20V, VGS = 0V
IGSS VGS = 8V, VDS = 0V
VGS (th) VDS = 10V, ID = 100mA
VGS=4.5V, ID=150mA
VGS=2.5V, ID=150mA
RDS(on) *4 VGS=1.8V, ID=150mA
VGS=1.5V, ID=20mA
VGS=1.2V, ID=10mA
gfs *4
VGS=4.5V, ID=150mA, Tj=125°C
VDS=10V, ID=150mA
-
-
0.3
-
-
-
-
-
-
110
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
-1
- 10
- 1.0
1.4 2.0
1.7 2.6
2.2 3.4
2.7 5.4
3.8 11.4
2.3 4.6
--
mA
mA
V
W
mS
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© 2014 ROHM Co., Ltd. All rights reserved.
2/10
2014.03 - Rev.A
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