파트넘버.co.kr RV3C002UN 데이터시트 PDF


RV3C002UN 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ROHM Semiconductor 로고
ROHM Semiconductor
RV3C002UN 데이터시트, 핀배열, 회로
RV3C002UN
Nch 20V 150mA Small Signal MOSFET
TENTATIVE
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
20V
2.0W
150mA
100mW
lFeatures
1) Ultra Small Package (0.6×0.4×0.36mm)
2) Low voltage drive (1.2V) makes this
device ideal for partable equipment.
3) Drive circuits can be simple.
4) Built-in ESD Protection Diode.
lApplication
Switching
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
VML0604
lInner circuit
(1) Gate
(2) Source
(3) Drain
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
8,000
T2CL
RY
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
Tj
Tstg
Value
20
150
600
10
100
150
-55 to +150
Unit
V
mA
mA
V
mW
°C
°C
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Symbol
RthJA *3
Values
Min. Typ. Max.
Unit
- - 1250 °C/W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/10
2014.03 - Rev.A


RV3C002UN 데이터시트, 핀배열, 회로
RV3C002UN
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
20 -
-V
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
IDSS VDS = 20V, VGS = 0V
IGSS VGS = 8V, VDS = 0V
VGS (th) VDS = 10V, ID = 100mA
VGS=4.5V, ID=150mA
VGS=2.5V, ID=150mA
RDS(on) *4 VGS=1.8V, ID=150mA
VGS=1.5V, ID=20mA
VGS=1.2V, ID=10mA
gfs *4
VGS=4.5V, ID=150mA, Tj=125°C
VDS=10V, ID=150mA
-
-
0.3
-
-
-
-
-
-
110
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
-1
- 10
- 1.0
1.4 2.0
1.7 2.6
2.2 3.4
2.7 5.4
3.8 11.4
2.3 4.6
--
mA
mA
V
W
mS
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/10
2014.03 - Rev.A




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RV3C002UN mosfet

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