파트넘버.co.kr RF6C055BC 데이터시트 PDF


RF6C055BC 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ROHM Semiconductor 로고
ROHM Semiconductor
RF6C055BC 데이터시트, 핀배열, 회로
RF6C055BC
  Pch -20V -5.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-20V
25.8mΩ
±5.5A
1.0W
lFeatures
1) Low on - resistance.
2) High Power small mold Package (TUMT6).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
SOT-363T
TUMT6
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Load switch
Taping code
TCR
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
CD
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.5 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±8 V
Power dissipation
PD*3 1.0 W
PD*4 0.91 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160314 - Rev.002    


RF6C055BC 데이터시트, 핀배열, 회로
RF6C055BC
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
RthJA*4
Values
Min. Typ. Max.
- - 125
- - 137
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = -20V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±8V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = VGS, ID = -1mA
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = -4.5V, ID = -5.5A
RDS(on)*5 VGS = -2.5V, ID = -5.5A
VGS = -1.8V, ID = -1.4A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = -5V, ID = -5.5A
Values
Unit
Min. Typ. Max.
-20 - - V
- -10.3 - mV/
- - -1 μA
- - ±100 nA
-0.5 - -1.2 V
- 1.7 - mV/
- 19.5 25.8
- 24.8 33.1 mΩ
- 33.7 63.6
- 11 - Ω
7 - -S
*1 Vgs2.5V
*2 Pw 10μs, Duty cycle 1%
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20160314 - Rev.002




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RF6C055BC mosfet

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