파트넘버.co.kr RF4E060AJ 데이터시트 PDF


RF4E060AJ 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



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ROHM Semiconductor
RF4E060AJ 데이터시트, 핀배열, 회로
RF4E060AJ
  Nch 30V 6A Middle Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
30V
37mΩ
±6.0A
2.0W
lFeatures
1) Low on - resistance.
2) High power small mold package
  (HUML2020L8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen free
5) 100% Rg and UIS tested.
lOutline
DFN2020-8S
HUML2020L8
 
      
lInner circuit
lPackaging specifications
Packing
Reel size (mm)
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
Tj
Tstg
30
±6.0
±24
±12
2.0
3.0
2.0
150
-55 to +150
 
Embossed
Tape
180
8
3000
TCR
HT
Unit
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160628 - Rev.001    


RF4E060AJ 데이터시트, 핀배열, 회로
RF4E060AJ
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
Values
Min. Typ. Max.
- - 62.5
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = VGS , ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 3.0A
Gate resistance
RG f=1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 5.0V, ID = 3.0A
Values
Unit
Min. Typ. Max.
30 - - V
- 18 - mV/
- - 1 μA
- - ±100 nA
0.5 - 1.5 V
- -1.8 - mV/
- 28 37
- 41 55
- 2.2 -
Ω
3.1 - - S
*1 Pw10μs , Duty cycle1%
*2 L 1mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25Fig.3-1,3-2
*3 Mounted on a Cu Board (40×40×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20160628 - Rev.001




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RF4E060AJ mosfet

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