파트넘버.co.kr R8008ANJ 데이터시트 PDF


R8008ANJ 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ROHM Semiconductor 로고
ROHM Semiconductor
R8008ANJ 데이터시트, 핀배열, 회로
R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
800V
0.98W
8A
40W
lOutline
LPT(S)
(SC-83)
(2)
(1)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R8008ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAS*3
PD
Tj
Tstg
dv/dt *5
800
8.0
4.3
32
30
4.2
3.4
4.0
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.10 - Rev.A


R8008ANJ 데이터시트, 핀배열, 회로
R8008ANJ
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 640V, ID = 8.0A
Tj = 125°C
Values
50
Unit
V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *6
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.13 °C/W
- - 80 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
800 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DSS VGS = 0V, ID = 4.0A
- 900 -
V
Zero gate voltage
drain current
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
0.1 100 mA
- 1000
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3
-
5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 4.0A
RDS(on) *7 Tj = 25°C
Tj = 125°C
- 0.75 0.98 W
- 1.70 -
Gate input resistance
RG f = 1MHz, open drain
-
6.4
-
W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/13
2013.10 - Rev.A




PDF 파일 내의 페이지 : 총 14 페이지

제조업체: ROHM Semiconductor

( rohm )

R8008ANJ mosfet

데이터시트 다운로드
:

[ R8008ANJ.PDF ]

[ R8008ANJ 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


R8008ANJ

Power MOSFET ( Transistor ) - ROHM Semiconductor



R8008ANX

Nch 800V 8A Power MOSFET - ROHM Semiconductor