파트넘버.co.kr R6010MND3 데이터시트 PDF


R6010MND3 반도체 회로 부품 판매점

MOSFET ( Transistor )



ROHM Semiconductor 로고
ROHM Semiconductor
R6010MND3 데이터시트, 핀배열, 회로
R6010MND3
  Nch 600V 10A Power MOSFET
   Datasheet
VDSS
600V
lOutline
 
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
 
      
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6010M
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±10 A
Pulsed drain current
IDP*2 ±30 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.5 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation (Tc = 25°C)
PD 143 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.003    


R6010MND3 데이터시트, 핀배열, 회로
R6010MND3
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.86 /W
- - 100 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 160μA
VGS = 10V, ID = 5A
RDS(on)*3 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
---
- - ±100 nA
3.0 - 5.0 V
   
- 0.280 0.380 Ω
---
- 2.5 - Ω
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160725 - Rev.003




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R6010MND3 mosfet

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