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ROHM Semiconductor |
R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6010M
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±10 A
Pulsed drain current
IDP*2 ±30 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.5 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation (Tc = 25°C)
PD 143 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.003
R6010MND3
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.86 ℃/W
- - 100 ℃/W
- - 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 160μA
VGS = 10V, ID = 5A
RDS(on)*3 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
- - 100 μA
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- - ±100 nA
3.0 - 5.0 V
- 0.280 0.380 Ω
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- 2.5 - Ω
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© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160725 - Rev.003
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