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MOSFET ( Transistor )



ROHM Semiconductor 로고
ROHM Semiconductor
QH8JA1 데이터시트, 핀배열, 회로
QH8JA1
  -20V Pch +Pch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-20V
38mΩ
±5.0A
1.5W
lFeatures
1) Low on - resistance.
2) Small surface mount package(TSMT8)
3) -1.8V Drive.
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
JA1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.0 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±10 V
Avalanche current, single pulse
IAS*3 -5.0 A
Avalanche energy, single pulse
EAS*3
8.9 mJ
Power dissipation (total)
PD*4 1.5
W
PD*5 1.1
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20151210 - Rev.001


QH8JA1 데이터시트, 핀배열, 회로
QH8JA1
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
                Datasheet
                       
Symbol
RthJA*4
RthJA*5
Values
Min. Typ. Max.
- - 83.3
- - 113
Unit
/W
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = -1mA
ΔV(BR)DSS ID = -1mA
  ΔTj  referenced to 25
IDSS VDS = -20V, VGS = 0V
IGSS VDS = 0V, VGS = ±10V
VGS(th) VDS = VGS, ID = -1mA
ΔVGS(th) ID = -1mA
  ΔTj  referenced to 25
VGS = -4.5V, ID = -5.0A
RDS(on)*6 VGS = -2.5V, ID = -5.0A
VGS = -1.8V, ID = -1.2A
RG f = 1MHz, open drain
|Yfs|*6 VDS = -5V, ID = -5A
Values
Min. Typ. Max.
   
Unit
-20 - - V
- -10.3 - mV/
- - -1 μA
- - ±100 nA
-0.5 - -1.2 V
- 1.7 - mV/
- 28 38
- 35 48 mΩ
- 49 77
- 11 - Ω
5.5 - - S
*1 Vgs2.5V
*2 Pw10μs , Duty cycle1%
*3 L 0.5mH, VDD = -10V, RG = 25Ω, STARTING Tj = 25Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (25×25×0.8mm)
*6 Pulsed
                                                                                               
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20151210 - Rev.001




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QH8JA1 mosfet

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