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RFD10P03L 반도체 회로 부품 판매점

P-Channel Power MOSFET



Harris 로고
Harris
RFD10P03L 데이터시트, 핀배열, 회로
SEMICONDUCTOR
May 1997
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200, Logic Level
P-Channel Power MOSFET
Features
Description
• 10A, 30V
• rDS(ON) = 0.200
Temperature Compensating PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Ordering Information
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
PART NUMBER
PACKAGE
BRAND
D
RFD10P03L
RFD10P03LSM
TO-251AA
TO-252AA
10P03L
10P03L
G
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
Formerly developmental type TA49205.
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
1
File Number 3515.1


RFD10P03L 데이터시트, 핀배열, 회로
RFD10P03L, RFD10P03LSM, RFP10P03L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD10P03L, RFD10P03LSM,
RFP10P03L
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20KΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation . . . .
Derate Above 25oC.
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.PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.063in (1.6mm) from case for 10s)
-30
-30
±10
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
V
V
V
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -30V,
TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±10V
ID = 10A, VGS = -5V
ID = 10A, VGS = -4.5V
VDD = 15V, ID 10A
RL = 1.5, RGS = 5Ω,
VGS = -5V
VGS = 0 to -10V
VGS = 0 to -5V
VGS = 0 to -1V
VDD = -24V,
ID 10A,
RL = 2.4
VDS = -25V, VGS = 0V
f = 1MHz
RFD10P03L, RFD10P03LSM
RFP10P03L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Forward Voltage
VSD
ISD = -10A
Reverse Recovery Time
trr ISD = -10A, dISD/dt = -100A/µs
NOTE:
1. Pulse Test: Pulse width 300µs, Duty Cycle 2%.
MIN TYP MAX UNITS
-30 -
-
V
-1 - -2
V
- - -1 µA
- - -50 µA
- - ±100 nA
- - 0.200
0.220
- - 100 ns
- 15 -
ns
- 50 -
ns
- 35 -
ns
- 20 -
ns
- - 80 ns
- 25 30 nC
- 13 16 nC
- 1.2 1.5 nC
- 1035 -
pF
- 340 -
pF
- 35 -
pF
-
-
2.30
oC/W
- - 100 oC/W
80 oC/W
MIN TYP MAX UNITS
- - -1.5 V
- - 75 ns
2




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RFD10P03L mosfet

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