STK004SF 반도체 회로 부품 판매점
Advanced N-Ch Trench MOSFET
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 AUK |
STK004SF
Advanced N-Ch Trench MOSFET
PORTABLE EQUIPMENT APPLICATION
Features
Low Voltage : BVDSS=20V(Min.)
Low VGS(th) : VGS(th)=0.6~1.2V
Small footprint due to small package
Low RDS(on) : RDS(on)=40mΩ(Max.)
Ordering Information
Type No.
Marking
STK004SF
K04 □
①②
Package Code
SOT-23F
PIN Connection
G
S
D
SOT-23F
Marking Diagram
K04 □
K04 : Specific Device Code
□ : year & week Code Marking
Absolute maximum ratings (TA=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Power dissipation **
Avalanche current (Single)
②
Single pulsed avalanche energy ②
Avalanche current (Repetitive)
①
Repetitive avalanche energy
①
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
VDSS
VGSS
ID
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
** Device mounted on a glass-epoxy board
Rating
20
12
4.2
16.8
0.35
4.2
27
4.2
2.5
150
-55~150
Characteristic
Thermal
resistance
Junction-ambient
Symbol
Rth(J-A)
KSD-T5C039-002
Typ.
-
Max.
357
Unit
V
V
A
A
W
A
mJ
A
mJ
C
Unit
C/W
1
STK004SF
Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
BVDSS
VGS(th)
ID=250uA, VGS=0
ID=250uA, VDS=VGS
Drain-source cut-off current
Gate leakage current
IDSS
IGSS
VDS=20V, VGS=0
VDS=0V, VGS=12V
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
④
④
RDS(ON)
gfs
Ciss
Coss
Crss
VGS=4.5V, ID=2.1A
VGS=2.5V, ID=2.1A
VDS=2V, ID=4.2A
VGS=0V, VDS=10V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=10V, ID=4.2A
RG=10Ω
③④
Total gate charge
Gate-source charge
Gate-drain charge
Qg
VDD=10V, VGS=4.5V
Qgs ID=4.2A
Qgd ③④
Min.
20
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
19
27
22
390
90
40
2.0
1.9
2.8
1.9
4.0
1.0
1.6
Max.
-
1.2
1
10
40
45
-
590
135
60
-
-
-
-
6.0
1.5
2.4
Unit
V
V
uA
uA
m
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TA=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Continuous source current
Source current (Pulsed)
Forward voltage
①
④
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=0.5A
- - 0.5
- - 2.0
- 0.7 1.2
Reverse recovery time
Reverse recovery charge
trr Is=0.5A, VGS=0V
Qrr dIF/dt=10A/us
- 57 -
- 240 -
Unit
A
V
ns
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=2.0mH, IAS=4.2A, VDD=10V, RG=25
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T5C039-002
2
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STK004SF mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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