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PDF FQD16N25C Data sheet ( Hoja de datos )
| Número de pieza | FQD16N25C | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQD16N25C
N-Channel QFET® MOSFET
250 V, 16 A, 270 mΩ
Features
• 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V,
ID = 8 A
• Low Gate Charge (Typ. 41 nC)
• Low Crss (Typ. 68 pF)
• 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2006 Fairchild Semiconductor Corporation
FQD16N25C Rev. C1
1
D
S
FQD16N25CTM
250
16
10.1
64
± 30
432
16
160
5.5
160
1.28
-55 to +150
300
FQD16N25CTM
0.78
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
www.fairchildsemi.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2006 Fairchild Semiconductor Corporation
FQD16N25C Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FQD16N25C.PDF ] | |
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