|
|
Número de pieza | FDD2582 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD2582 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! FDD2582
N-Channel PowerTrench® MOSFET
150V, 21A, 66mΩ
Features
• rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A
• Qg(tot) = 19nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82855
March 2015
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
DRAIN
(FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25 oC, VGS = 10V)
Continuous (TC = 100 oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
150
±20
21
15
3.7
Figure 4
59
95
0.63
-55 to 175
1.58
100
52
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD2582 Rev. 1.2
1 page Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
1000
COSS ≅ CDS + CGD
100 CRSS = CGD
CISS = CGS + CGD
10
VDD = 75V
8
6
4
VGS = 0V, f = 1MHz
10
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 21A
ID = 7A
5 10 15
Qg, GATE CHARGE (nC)
20
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2002 Fairchild Semiconductor Corporation
FDD2582 Rev. 1.2
5 Page 11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet FDD2582.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD2582 | MOSFET ( Transistor ) | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |