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PDF FDG327NZ Data sheet ( Hoja de datos )
| Número de pieza | FDG327NZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2015
FDG327NZ
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 1.5 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 100 mΩ @ VGS = 2.5 V
RDS(ON) = 140 mΩ @ VGS = 1.8 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
S
D
D
Pin 1
SC70-6
G
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.37
FDG327NZ
7’’
Ratings
20
±8
1.5
6
0.42
0.38
–55 to +150
300
333
Tape width
8mm
Units
V
A
W
°C
°C/W
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDG327NZ Rev 1.2 (W)
1 page  
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDG327NZ.PDF ] | |
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