FDT86256 반도체 회로 부품 판매점
MOSFET ( Transistor )
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 Fairchild Semiconductor |
FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.2 A, 845 mΩ
Features
Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
Very low Qg and Qgd compared to competing trench
technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Fast switching speed
100% UIL Tested
RoHS Compliant
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
SOT-223
S
D
G
D
GDS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
3
2.5
1.2
2
1
10
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
12
55
°C/W
Device Marking
86256
Device
FDT86256
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
100 mV/°C
1 μA
±10 μA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 1.2 A
VGS = 6 V, ID = 1.0 A
VGS = 10 V, ID = 1.2 A, TJ = 125 °C
VDS = 5 V, ID = 1.2 A
2
3.5
-8
695
912
1298
0.3
4
845
1280
1367
V
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1MHz
55 73
8 11
1 1.4
1.3
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 1.2 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V
VDD = 75 V,
ID = 1.2 A
2.7 10
ns
1.7 10
ns
4.8 10
ns
2.6 10
ns
1.2 2.0 nC
0.8 1.0
0.4 nC
0.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.2 A
VGS = 0 V, IS = 1.0 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 1.2 A, di/dt = 100 A/μs
0.9 1.3
0.8 1.3
V
47 75 ns
24 38 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 55 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 °C, L = 3 mH, IAS = 1 A, VDD = 150 V, VGS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
2
www.fairchildsemi.com
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FDT86256 mosfet
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