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PDF FDZ661PZ Data sheet ( Hoja de datos )
| Número de pieza | FDZ661PZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDZ661PZ
December 2011
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -2.6 A, 140 mΩ
Features
General Description
Max rDS(on) = 140 mΩ at VGS = -4.5 V, ID = -2 A
Max rDS(on) = 182 mΩ at VGS = -2.5 V, ID = -1.5 A
Max rDS(on) = 231 mΩ at VGS = -1.8 V, ID = -1 A
Max rDS(on) = 315 mΩ at VGS = -1.5 V, ID = -1 A
Occupies only 0.64 mm2 of PCB area. Less than 16% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
HBM ESD protection level > 2 kV (Note3)
RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ661PZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile (0.4
mm) and small (0.8x0.8 mm2) packaging, low gate charge, and
low rDS(on).
Applications
Battery management
Load switch
Battery protection
S
DS
G
Pin 1
BOTTOM
Pin 1
TOP
WL-CSP 0.8X0.8 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-2.6
-10
1.3
0.4
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
93
311
°C/W
Device Marking
EH
Device
FDZ661PZ
Package
WL-CSP 0.8X0.8 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 311 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDZ661PZ.PDF ] | |
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